Electronic band structure of indium tin oxide and criteria for transparent conducting behavior

By O. Mryasov, A. Freeman. 2001

255 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6245c8e346def18522bda52770648cacf388a8e1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. M. Batzill
2. K. Ellmer
3. U. Diebold
4. A. Bikowski
5. A. Klein

In Materials Chemistry

1. M. Batzill
2. K. Ellmer
3. U. Diebold
4. A. Bikowski
5. A. Klein

Citations in the corpus

• The surface and materials science of tin oxide (2005, background): “On the other hand, the dispersion of the conduction band is slightly less for Sn doped In2O3 than for pure In2O3 which lowers the charge carrier mobility with increasing Sn concentration.”
• Flexible Sensors—From Materials to Applications (2019, background): “ITO combines high transparency in the visible range (>80%) with a low electric resistivity (1× 10–4 Ω cm) [64].”
• Intrinsic and extrinsic doping of ZnO and ZnO alloys (2016, background): “It is the s-type character of the conduction bands of the TCO materials together with their high conduction band dispersion, which explains the low resistivity and mobility of these materials [71].”