In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

By L. Jiang, Shengshi Li, N. Yeh, J. Chyi, C. E. Ross, K. Jones. 2003

141 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/61da41f3d294de32080f4870ed74bcfd3c2edece

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1. Subhananda Chakrabarti
2. A. Stiff-Roberts
3. P. Bhattacharya
4. S. Gunapala
5. S. Bandara
6. S. Kennerly
7. Sir Rafol

Citations in the corpus

• High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity (2004, result): “12 A/W, and compared to recently reported results [11], [12], this value represents the”