Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance

By R. Bianchi, G. Bouché, O. Roux‐dit‐Buisson. Digest. International Electron Devices Meeting,, 2002

148 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/60c797eda14512d39d64dd9fcf80df1801228e0c