A 128 Gb/s PAM4 Silicon Microring Modulator With Integrated Thermo-Optic Resonance Tuning
By Jie Sun, Ranjeet Kumar, M. Sakib, J. Driscoll, H. Jayatilleka, Haisheng Rong. Journal of Lightwave Technology, 2019
216 citations recorded by the source corpus.
We report the first demonstration of a silicon photonic microring modulator with modulation data rate up to 128 Gb/s (64 Gbaud PAM4). The microring modulator exhibits an electro-optic phase efficiency of V<inline-formula><tex-math notation="LaTeX">$_\pi \cdot$</tex-math></inline-formula> L = 0.52 V<inline-formula><tex-math notation="LaTeX">$\cdot$</tex-math></inline-formula>cm, an electro-optic bandwidth of 50 GHz, and a measured transmitter dispersion eye closure quaternary of 3.0 dB at this data rate. In addition, the resonant wavelength of the microring modulator can be tuned across a full free spectral range using an integrated heater with a thermo-optic phase efficiency of 19.5 mW<inline-formula><tex-math notation="LaTeX">$/\pi$</tex-math></inline-formula>-phase shift.
Subfields: Artificial Intelligence, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/60427fe0f69fa4b7733a87ad3de817ffb7051606
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Citations in the corpus
- Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, methodology): “implementations that rely on combining these three schemes in a single PN junction design.(9,33,79,85,86) An example is the substrate-removed “zig-zag” phase shifter for an MZM delivering”
- Roadmapping the next generation of silicon photonics (2023, background): “APDs also need to be biased optimally and stabilized for temperature and voltage drift, but that is less challenging [117] than what has already been demonstrated for microring circuits [50].”