Creation efficiency of nitrogen-vacancy centres in diamond

By S. Pezzagna, B. Naydenov, Fedor Jelezko, J. Wrachtrup, J. Meijer. 2010

336 citations recorded by the source corpus.

Nitrogen-vacancy (NV) colour centres in diamond are attracting growing attention due to potential applications in solid-state quantum information processing and magnetometry. Although proof-of-principle experiments have been demonstrated, further development requires the controllable production of defects with a high yield. In this paper, we experimentally show that the production efficiency of NV defects strongly depends on the ion implantation energy. This can be explained in terms of the number of vacancies produced per implanted ion and surface proximity. The dependence on ion fluence is also underlined, revealing a nonlinear regime and showing how the diamond lattice is damaged at higher fluences.

Subfields: Computational Mechanics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/602158ef6717ac8a0dafdda5b8963165e585f44a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Computational Mechanics

1. J. Meijer
2. C. Degen
3. S. Pezzagna

In Electrical and Electronic Engineering

1. J. Cardenas
2. Michal Lipson
3. Dirk Englund
4. Igor Aharonovich

In Materials Chemistry

1. Patrick Maletinsky
2. Jean‐Philippe Tetienne
3. V. Jacques
4. L. Rondin
5. J. Roch
6. T. Hingant
7. J. Meijer
8. Steven Prawer

Citations in the corpus

• Magnetometry with nitrogen-vacancy defects in diamond (2013, background): “drops strongly with N implantation energy [91] (i.”
• Quantum nanophotonics in diamond [Invited] (2016, methodology): “To further understand the creation process of color centers via ion implantation, the creation efficiency of NVs as a function of ion energy was experimentally determined [104] and compared to theoretical models, leading to 25% NV creation yield per implanted nitrogen ion [133].”
• Creation and nature of optical centres in diamond for single-photon emission—overview and critical remarks (2011, background): “It has been shown in [57] that the yield (measured after nitrogen ion implantation and subsequent annealing at 800 C for 2 h) is very low, amounting to only 1% for N ions at keV energies, whereas it can reach 50% when the implantation has been carried out at MeV energies.”
• Scalable Integration of Long-Lived Quantum Memories into a Photonic Circuit (2014, background): “The number of fabrication attempts necessary to create a monolithic network in which all nodes contain NV quantum memories with the desired spectral and spin properties scales exponentially with the number of desired nodes, which is prohibitive with current NV creation yields of well less than 10% [”
• Diamond-based single-photon emitters (2011, background): “This increased number of vacancies per ion is believed to be the explanation for the increased formation probability of NV with increasing ion implantation energy, and hence depth within the crystal [107].”
• Nitrogen-vacancy centers in diamond: nanoscale sensors for physics and biology. (2014, background): “Alternatively, for bulk crystals, high concentrations of nitrogen can be introduced by ion implantation (23) or by deliberate doping during CVD growth (24).”