Optical functions and electronic structure of CuInSe 2 , CuGaSe 2 , CuInS 2 , and CuGaS 2

By M. Alonso, K. Wakita, J. Pascual, M. Garriga, N. Yamamoto. 2001

289 citations recorded by the source corpus.

We report on the complex dielectric tensor components of four chalcopyrite semiconductors in the optical energy range (1.4-5.2 eV, from 0.9 eV for CuInSe2) determined at room temperature by spectroscopic ellipsometry. Our results were obtained on single crystals of CuInSe2, CuGaSe2, CuInS2, and CuGaS2. Values of refractive indices n, extinction coefficients k and normal-incidence reflectivity R in the two different polarizations are given and compared with earlier data where available. We analyze in detail the structures of the dielectric function observed in the studied energy region. Critical-point parameters of electronic transitions are obtained from fitting of numerically calculated second-derivative spectra. Experimental energies and polarizations are discussed on the basis of published band structure calculations.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/600d047497d6e8efb8ea58251b6cc6aa596bc00e

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In Electrical and Electronic Engineering

1. S. Siebentritt
2. Clas Persson
3. S. Lany
4. M. Igalson
5. S. Abermann

In Materials Chemistry

1. S. Siebentritt
2. Clas Persson
3. S. Lany
4. M. Igalson
5. S. Abermann

Citations in the corpus

• The electronic structure of chalcopyrites—bands, point defects and grain boundaries (2010, background): “The ordering of the VBs is well established [2,11,12,20,22].”