Spin–orbit qubit in a semiconductor nanowire

By S. Nadj-Perge, S. Frolov, E. Bakkers, L. Kouwenhoven. Nature, 2010

604 citations recorded by the source corpus.

Motion of electrons can influence their spins through a fundamental effect called spin–orbit interaction. This interaction provides a way to control spins electrically and thus lies at the foundation of spintronics. Even at the level of single electrons, the spin–orbit interaction has proven promising for coherent spin rotations. Here we implement a spin–orbit quantum bit (qubit) in an indium arsenide nanowire, where the spin–orbit interaction is so strong that spin and motion can no longer be separated. In this regime, we realize fast qubit rotations and universal single-qubit control using only electric fields; the qubits are hosted in single-electron quantum dots that are individually addressable. We enhance coherence by dynamically decoupling the qubits from the environment. Nanowires offer various advantages for quantum computing: they can serve as one-dimensional templates for scalable qubit registers, and it is possible to vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and to push semiconductor qubit fidelities towards error correction levels. Furthermore, electrical dots can be integrated with optical dots in p–n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, which can serve as a flying qubit for long-distance quantum communication.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5f62c4442a92ac76aceb3ff44366ffb730f775fa

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Materials challenges and opportunities for quantum computing hardware (2021, background): “In addition, early work exploiting spin-orbit interaction to enable fast electric control of spin states (167, 168) has led to the active exploration of hole spin-orbit qubits in Ge and Si-CMOS quantum dot devices (169, 170).”
New perspectives for Rashba spin-orbit coupling. (2015, methodology): “Coherent control of individual electron spins using gigahertz electric fields by means of electric dipole spin resonance (EDSR) has been performed in GaAs/AlGaAs gate-defined quantum dots [47], and in InAs nanowires [48] establishing SO qubits.”
Single-electron current sources: towards a refined definition of ampere (2012, background): “Alternatively, quantum dots can be fabricated from epitaxially grown nanowires (Fasth et al., 2007; Nadj-Perge et al., 2010; Ohlsson et al., 2002).”
Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides (2013, background): “, jl 1⁄4 0; K0;↑i and jl 1⁄4 0; K;↓i, as a combined spin-valley qubit [54,61].”
A hole spin qubit in a fin field-effect transistor above 4 kelvin (2021, methodology): “The obtained values for T ∗2 are consistent with the EDSR spectral width (Supplementary Section 9), and a spin relaxation time T1> 10µs was found at 4.2 K (Supplementary Section 12).”