Integrated gallium phosphide nonlinear photonics

By Dalziel J. Wilson, K. Schneider, Simon Hönl, M. Anderson, Y. Baumgartner, L. Czornomaz, Tobias J. Kippenberg, P. Seidler. Nature Photonics, 2018

282 citations recorded by the source corpus.

Gallium phosphide (GaP) is an indirect-bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties—including large χ (2) and χ (3) coefficients, a high refractive index (>3) and transparency from visible to long-infrared wavelengths (0.55–11 μm)—its application as an integrated photonics material has been little studied. Here, we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer-bonding approach to realize integrated waveguides with 1.2 dB cm −1 loss in the telecommunications C-band (on par with Si-on-insulator). High-quality ( Q > 10 5 ), grating-coupled ring resonators are fabricated and studied. Employing a modulation transfer approach, we obtain a direct experimental estimate of the nonlinear index of GaP at telecommunication wavelengths: n 2 = 1.1(3) × 10 −17 m 2 W −1 . We also observe Kerr frequency comb generation in resonators with engineered dispersion. Parametric threshold powers as low as 3 mW are realized, followed by broadband (>100 nm) frequency combs with sub-THz spacing, frequency-doubled combs and, in a separate device, efficient Raman lasing. These results signal the emergence of GaP-on-insulator as a novel platform for integrated nonlinear photonics. A scalable solution involving direct wafer-bonding of high-quality, epitaxially grown gallium phosphide to low-index substrates is introduced. The promise of this platform for integrated nonlinear photonics is demonstrated with low-threshold frequency comb generation, frequency-doubled combs and Raman lasing.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5ed17296518c5be4e6830592a28dca26bb579837

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Citations in the corpus

Development of Quantum Interconnects (QuICs) for Next-Generation Information Technologies (2021, background): “III-V semiconductors such as GaP [134] and AlGaAs and wide-bandgap materials such as SiC [100] and diamond also possess strong optical nonlinearities [135], but have not yet achieved the level of performance of the aforementioned systems.”