Tunnel oxide passivated contacts as an alternative to partial rear contacts

By F. Feldmann, M. Bivour, C. Reichel, H. Steinkemper, M. Hermle, Stefan W. Glunz. 2014

343 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5e87acb4023b252c1f08105aa7a02f8f01529edf

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Robby Peibst
2. F. Feldmann
3. M. Hermle
4. Stefan W. Glunz
5. Yanfa Yan
6. Kylie Catchpole

In Electrical and Electronic Engineering

1. F. Feldmann
2. Robby Peibst
3. M. Hermle
4. K. Zhu
5. Stefan W. Glunz
6. Yanfa Yan
7. Kylie Catchpole
8. Paul Denholm

In Materials Chemistry

1. K. Zhu
2. Yanfa Yan
3. M. Al‐Jassim
4. Kylie Catchpole
5. M. Hermle
6. Stefan W. Glunz
7. N. Park

Citations in the corpus

• The 2020 photovoltaic technologies roadmap (2020, background): “Technologies based on poly-crystalline silicon (TOPCon [30]) or amorphous silicon (SHJ [18]) have proven to yield excellent surface passivation and good carrier transport properties.”
• Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water (2015, background): “The tunnel oxide passivated contact (TOPCon) [1] consists of a stack of an ultra-thin tunnel oxide layer and a doped Si layer which partially crystallizes upon annealing.”