Radiation-induced segregation on defect clusters in single-phase concentrated solid-solution alloys
By Chenyang Lu, Tai-ni Yang, K. Jin, N. Gao, Pengyuan Xiu, Yanwen Zhang, Fei Gao, Hongbin Bei, William J. Weber, Kai Sun and 2 more. 2017
280 citations recorded by the source corpus.
Abstract A group of single-phase concentrated solid-solution alloys (SP-CSAs), including NiFe, NiCoFe, NiCoFeCr, as well as a high entropy alloy NiCoFeCrMn, was irradiated with 3 MeV Ni 2+ ions at 773 K to a fluence of 5 × 10 16 ions/cm 2 for the study of radiation response with increasing compositional complexity. Advanced transmission electron microscopy (TEM) with electron energy loss spectroscopy (EELS) was used to characterize the dislocation loop distribution and radiation-induced segregation (RIS) on defect clusters in the SP-CSAs. The results show that a higher fraction of faulted loops exists in the more compositionally complex alloys, which indicate that increasing compositional complexity can extend the incubation period and delay loop growth. The RIS behaviors of each element in the SP-CSAs were observed as follows: Ni and Co tend to enrich, but Cr, Fe and Mn prefer to deplete near the defect clusters. RIS level can be significantly suppressed by increasing compositional complexity due to the sluggish atom diffusion. According to molecular static (MS) simulations, “disk” like segregations may form near the faulted dislocation loops in the SP-CSAs. Segregated elements tend to distribute around the whole faulted loop as a disk rather than only around the edge of the loop.
Subfields: Aerospace Engineering, Mechanical Engineering
View Paper: https://www.semanticscholar.org/paper/5e51db3b13e200144a493bf7f5c448032c5c55bf
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In Aerospace Engineering
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In Mechanical Engineering
Citations in the corpus
- Lattice distortion in a strong and ductile refractory high-entropy alloy (2018, background): “For example, severe lattice distortions produce unconventional dislocation lines in HEAs, leading to a distinct deformation mechanism in metallic materials [65,66].”