Tunable spin–orbit coupling and symmetry-protected edge states in graphene/WS2

By Bowen Yang, Min-Feng Tu, Jeongwoo Kim, Yong Wu, Hui Wang, J. Alicea, R. Wu, M. Bockrath, Jing Shi. 2016

153 citations recorded by the source corpus.

We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin–orbit coupling (SOC) in WS2-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS2-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the Rashba SOC relaxation rate to be ∼ 0.2 ps − 1 and show that it can be tuned by transverse electric fields. In addition to the Rashba SOC, we also predict the existence of a‘valley-Zeeman’ SOC from first-principles calculations. The interplay between these two SOC’s can open a non-topological but interesting gap in graphene; in particular, zigzag boundaries host four sub-gap edge states protected by time-reversal and crystalline symmetries. The graphene/WS2 system provides a possible platform for these novel edge states.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5e2a098efc9282d26f3e2287b42326fe4536708c

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In Atomic and Molecular Physics, and Optics

  1. Hector Ochoa
  2. I. Vera-Marun
  3. Ahmet Avsar
  4. J. V. Wees
  5. B. Özyilmaz
  6. Francisco Guinea
  7. N. M. R. Peres
  8. K. Novoselov

In Materials Chemistry

  1. Hector Ochoa
  2. I. Vera-Marun
  3. B. Özyilmaz
  4. Francisco Guinea
  5. N. M. R. Peres
  6. K. Novoselov
  7. A. C. Castro Neto
  8. A.K. Geim

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