Dynamics of stimulated emission in silicon nanocrystals

By L. D. Negro, M. Cazzanelli, Lorenzo Pavesi, S. Ossicini, D. Pacifici, G. Franzó, Francesco Priolo, F. Iacona. 2003

152 citations recorded by the source corpus.

Time-resolved luminescence measurements on silicon nanocrystal waveguides obtained by thermal annealing of plasma-enhanced chemical-vapor-deposited thin layers of silicon-rich oxide have revealed fast recombination dynamics related to population inversion which leads to net optical gain. Variable stripe length measurements performed on the fast emission signal have shown an exponential growth of the amplified spontaneous emission with net gain values of about 10 cm−1. The fast emission component is strongly dependent on the pumping length for fixed excitation intensity. In addition, both the fast component intensity and its temporal decay revealed threshold behavior as a function of the incident pump intensity.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5dd16a89badbde3e03e90955c16360e94d0b1ee0

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In Biomedical Engineering

1. Vladimir Belyakov
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In Electrical and Electronic Engineering

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In Materials Chemistry

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2. Vladimir Belyakov
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Citations in the corpus

• Silicon Nanocrystals: Fundamental Theory and Implications for Stimulated Emission (2008, methodology): “Different methods can be used for preparation of silicon nanocrystals, for instance, Si ion implantation [37–41], chemical vapor deposition [42], magnetron sputtering [43, 44], colloidal synthesis [45], electron beam evaporation [46, 47], and some others.”