Manipulating exciton fine structure in quantum dots with a lateral electric field
By B. Gerardot, S. Seidl, P. Dalgarno, R. Warburton, D. Granados, J. Garcı́a, K. Kowalik, O. Krebs, K. Karrai, Antonio Badolato and 1 more. 2006
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The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. © 2007 American Institute of Physics. DOI: 10.1063/1.2431758
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5dc17421317454fbae99debf32d60571a3bb5696
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In Atomic and Molecular Physics, and Optics
Citations in the corpus
- Electric-field-induced coherent coupling of the exciton states in a single quantum dot (2010, background): “Other tuning techniques such as magnetic field [1, 6], strong coherent lasers [2, 3], lateral electric field [4, 5, 13] and vertical electric field [14, 15] have been investigated but those that have been able to minimise the FSS have seen the states cross [1–5].”