Charge transport in graphene–polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

By A. Liscio, G. P. Veronese, E. Treossi, F. Suriano, F. Rossella, V. Bellani, R. Rizzoli, Paolo Samorì, V. Palermo. 2011

142 citations recorded by the source corpus.

Blends of reduced graphene oxide (RGO) and poly(3-hexylthiophene) (P3HT) are used as the active layer of field-effect transistors (FETs). By using sequential deposition of the two components, the density of RGO sheets can be tuned linearly, thereby modulating their contribution to the charge transport in the transistors, and the onset of charge percolation. The surface potential of RGO, P3HT and source–drain contacts is measured on the nanometric scale with Kelvin Probe Force Microscopy (KPFM), and correlated with the macroscopic performance of the FETs. KPFM is also used to monitor the potential decay along the channel in the working FETs.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5d41a2854a50917a57ecccb609f7d6262a3ce251

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Production and processing of graphene and related materials (2020, methodology): “For grown GRMs, SPM can be used to probe morphological properties, as well as to study growth mechanisms and quality of transfer.”