Site location of Al-dopant in ZnO lattice by exploiting the structural and optical characterisation of ZnO:Al thin films

By A. Nakrela, N. Benramdane, A. Bouzidi, Z. Kebbab, M. Medles, C. Mathieu. 2016

152 citations recorded by the source corpus.

Abstract The zinc oxide thin films, highly transparent, doped aluminium were prepared on glass substrates by the reactive chemical spray method. The incorporation nature of Al atoms in the ZnO lattice was determined by X-ray diffraction and optical analyses. Indeed, for low doping ⩽2%, the results of X-ray spectra analysis show a simultaneous reduction of lattice parameters (a and c), this variation, which follows VEGARD’s law, tends to indicate a substitution of Zn by Al. By against for doping >2% the increase in the lattice parameters thus the grain sizes, in accordance with the VEGARD’s law can be explained by occupation of the interstitial sites by Al atoms. Beyond 4%, the material tends to get disorderly and the crystallites orientation is random. The studied optical properties show that the variation of the optical gap follows a law of the x3/2 form for x

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5ccddd4989b101164c5a1d270d2399de360647f0