A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

By T. Tezuka, N. Sugiyama, T. Mizuno, Masamichi Suzuki, S. Takagi. 2000

169 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5c7eedf9855061e59154122b9f24ceeb33ece2ba

How researchers see this paper

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In Biomedical Engineering

1. Xihong Peng
2. Q. Wei

In Electrical and Electronic Engineering

1. Xihong Peng
2. Q. Wei

Citations in the corpus

• Superior mechanical flexibility of phosphorene and few-layer black phosphorus (2014, background): “One of the most prominent examples is the greatly enhanced mobility in the strained Si nanochannel [18, 19].”