Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates
By C. S. Yang, L. Smith, C. Arthur, G. Parsons. 2000
152 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5c46acdb089d38579cb880599c1843332269c8a0
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Thermal transport in amorphous materials: a review (2016, background): “Yang et al [73] further studied this anomalously high thermal conductivity film via TDTR and compared it with various other a-Si samples.”
- Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors (2011, background): “[1]–[4], but device performance is limited by the low mobility of the channel materials.”
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors (2004, background): “So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H”