Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
By C. Paranthoen, N. Bertru, O. Dehaese, A. Corre, S. Loualiche, B. Lambert, G. Patriarche. 2001
172 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/5c4604c6899d942a49b4787460a5f0eb342c23e6
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In Electrical and Electronic Engineering
Citations in the corpus
- Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m (2007, background): “oped: the former uses the (3 1 1) B surface [5], [6], and the latter one is based on the optimization of QD on (1 0 0) oriented substrates.”