Graphene Growth Dynamics on Epitaxial Copper Thin Films
By R. Jacobberger, M. Arnold. 2013
140 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5c30ed23085448558090c153e6c76839f635687d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Francesco Bonaccorso
- Andrea C. Ferrari
- A. Castellanos-Gómez
- M. Prato
- O. Frank
- Nicola Marzari
- Nicola Maria Pugno
- Jonathan N. Coleman
In Electrical and Electronic Engineering
- Francesco Bonaccorso
- Andrea C. Ferrari
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
- A. Castellanos-Gómez
- Xinliang Feng
In Materials Chemistry
- Kostas Kostarelos
- M. Prato
- Francesco Bonaccorso
- A. Bianco
- A. Castellanos-Gómez
- Jonathan N. Coleman
- Andrea C. Ferrari
- Paolo Samorì
Citations in the corpus
- Production and processing of graphene and related materials (2020, background): “[796] reported a comprehensive study of the evolution of the crystal morphologies grown inside Cu enclosures as a function surface orientation, absolute pressure, hydrogen-to-methane ratio (H2:CH4), and nucleation density At low pressure and low H2:CH4, circular graphene islands initially form.”
- Interaction between graphene and copper substrate: The role of lattice orientation (2014, background): “3 presence of Cu grain boundaries and transition between individual Cu lattice orientations, both of which largely affect the resulting graphene, epitaxial growth on surfaces with defined long-range crystalline order is particularly appealing [15, 18, 25-32].”
- Synthesis of Hexagonal Boron Nitride Monolayer: Control of Nucleation and Crystal Morphology (2015, background): “[18] Unlike graphene, hBN contains two different elements and thus has greater variation in crystal’s termination groups.”