Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field
By Yan Li, Shengxue Yang, Jingbo Li. 2014
277 citations recorded by the source corpus.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5c1de50e4ac91a167eed27c588cb954b345943b3
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In Materials Chemistry
- Han Wang
- Fengnian Xia
- Xingzhu Chen
- X. Ling
- Shengxi Huang
- Xiujian Zhao
- Pengfei Chen
- Mildred S. Dresselhaus
Citations in the corpus
- The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications (2017, background): “Moreover, the effect of strain on the band structure of black phosphorus in different directions on the X–Y plane was also investigated by Li et al and Kistanov et al [47, 94].”
- The renaissance of black phosphorus (2015, background): “d gap of single-layer black P is 2.05 eV. In addition, compressive and tensile strain can lead to a significant modification of the black P band structure especially in its single- and few-layer form (34, 72). As a result, single layer to thin film black P can cover a very broad energy spectrum and ”