Quantum Confinement Observed in ZnO/ZnMgO Nanorod Heterostructures

By Won Il Park, G. Yi, Miyoung Kim, S. Pennycook. 2003

317 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5c191423ab3b1afaea758efa03d6fbc6291e937c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Chunrui Wang
2. Peidong Yang
3. W. Park
4. M. Law
5. G. Yi
6. Joshua E. Goldberger
7. Faiz Rahman
8. Zhong Lin Wang

In Materials Chemistry

1. Chunrui Wang
2. Peidong Yang
3. W. Park
4. G. Yi
5. M. Law
6. Joshua E. Goldberger
7. Faiz Rahman
8. Zhong Lin Wang

Citations in the corpus

• Zinc oxide light-emitting diodes: a review (2019, background): “ago, it was already demonstrated that the MgZnO/ZnO nanorod heterointerface provides good band alignment and carrier confinement.(107) Here the bottom MgZnO layer served not”
• SEMICONDUCTOR NANOWIRES AND NANOTUBES (2004, background): “The ZnO/ZnMgO multiple quantum well (MQW) nanorod study by Pennycook and colleagues (79) is a fine example of a versatile quantum device based on an individual heterostructure.”
• ZnO nanorods: synthesis, characterization and applications (2005, methodology): “While there are a number of well-established techniques including molecular beam epitaxy (MBE) and MOVPE for generating quantum well or superlattice thin films, there are only a few papers reporting nanorod heterostructures that exhibit atomically abrupt interfaces [94, 95].”