Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

By Pallab K. Bhattacharya, S. Ghosh, S. Pradhan, Jasprit Singh, Zong-Kwei Wu, J. Urayama, Kyoungsik Kim, T. Norris. 2003

178 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5be42a86d7bcbdc9f78bc84dd14d23bdf413c346

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. T. W. Berg
2. Jesper Mørk
3. Weng W. Chow
4. John E. Bowers

In Electrical and Electronic Engineering

1. Justin C. Norman
2. T. W. Berg
3. Jesper Mørk
4. Weng W. Chow
5. John E. Bowers
6. Po Dong

Citations in the corpus

• A Review of High-Performance Quantum Dot Lasers on Silicon (2019, background): “Then by optimizing the barrier thickness between the dot and well, an efficient tunnel injection process [38] can be achieved which improves gain, high temperature performance [32], [39], and modulation characteristics [40].”
• Saturation and noise properties of quantum-dot optical amplifiers (2004, background): “Carrier heating has been pointed out be present both in bulk [48] SOAs and QD lasers [24], [53], and is also expected to be an issue in the context of QD SOAs.”