Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

By Jeong‐Min Lee, I. Cho, Jong-Ho Lee, H. Kwon. 2008

531 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5be332c3e8a7d7f248bc0bba0879d8898f2ecfcd

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In Electrical and Electronic Engineering

1. Henning Sirringhaus
2. G. Horowitz
3. S. Ludwigs

Citations in the corpus

• Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. (2011, background): “5) and comparable to that of sputtered amorphous oxide”