Electric-field dependent spin diffusion and spin injection into semiconductors

By Zhi-Gang Yu, M. E. Flatté. Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401), 2002

163 citations recorded by the source corpus.

In this paper, the consequences of using a drift diffusion equation for spin polarization in the semiconductors that consistently takes into account electric field effects and electron statistics is described.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5b819d261f35d58b8210867e2da657132e35ba16

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Albert Fert
2. M. E. Flatté
3. David D. Awschalom
4. Jian‐Hua Jiang
5. M. Weng
6. M. Wu
7. O. Yazyev
8. Wolfgang Wernsdorfer

In Electrical and Electronic Engineering

1. Albert Fert
2. M. E. Flatté
3. David D. Awschalom
4. M. Weng
5. M. Wu
6. Jian‐Hua Jiang
7. Wolfgang Wernsdorfer

Citations in the corpus

• Spin dynamics in semiconductors (2010, background): “When a semiconductor is in contact with a spin polarization s urce at x = 0, B = 0 and the electric field is along the x-direction, the drift-di ffusion model predicts spin accumulation with exponential decay in the semiconductor S(x) = S0 exp[−x/Ls(E)] in which the electric-field-dependent spin inj”
• Challenges for semiconductor spintronics (2007, background): “Initial theories of electronic spin transport, within the two-channel model, emphasized the importance of drift for the motion of spin-density packets in semiconductors relative to metal”
• Nobel Lecture: Origin, development, and future of spintronics (2008, background): “They can also be extended to take into account band bending and high current density effects Yu and Flatté, 2002; Fert et al., 2007 .”