Defect properties and p -type doping efficiency in phosphorus-doped ZnO

By Woojin Lee, Joongoo Kang, Kee Joo Chang. 2006

192 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5b44e2ec9be0ce0673833b3df6389a5a65aae383

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In Electronic, Optical and Magnetic Materials

1. K. Ellmer
2. A. Bikowski

In Materials Chemistry

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2. A. Bikowski

Citations in the corpus

• Recent Advances in ZnO-Based Light-Emitting Diodes (2010, unknown): “P, As, and Sb substitute Zn sites, forming a donor, then it induces two Zn vacancy acceptors as a complex form (PZn−2V Zn, AsZn−2V Zn, and SbZn−2V Zn) [101], [102].”
• Intrinsic and extrinsic doping of ZnO and ZnO alloys (2016, methodology): “Lee et al used the idea of Limpijumnong et al to calculate formation and ionization energies of phosphorous-doped ZnO [98].”