Raman spectroscopy as a versatile tool for studying the properties of graphene.
By Andrea C. Ferrari, D. Basko. Nature Nanotechnology, 2013
6,718 citations recorded by the source corpus.
Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5b175d4060f80d30f494bd8b6b32a37581d01773
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In Materials Chemistry
- K. Novoselov
- A. Castellanos-Gómez
- A. Di Bartolomeo
- Herre S. J. van der Zant
- Francisco Guinea
- G. Steele
- Andrea C. Ferrari
- Zhenhua Ni
Citations in the corpus
- Broadband Graphene Saturable Absorber for Pulsed Fiber Lasers at 1, 1.5, and 2 μm (2014, neutral): “an effective decoupling of adjacent layers [32].”
- Interaction between graphene and copper substrate: The role of lattice orientation (2014, methodology): “Raman spectroscopy is undoubtedly one of the prominent methods used for characterization of graphene [33, 34].”
- Novel effects of strains in graphene and other two dimensional materials (2015, background): “The Raman spectrum of defect-free single layer graphene is characterized by two peaks: The G peak, which corresponds to the excitation of a phonon in the doubly degenerate in-plane optical mode E2 (see Table II), and the 2D peak, due to a two-phonon process which involves scattering of electron-hole”