1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

By D. Shibata, Ryo Kajitani, M. Ogawa, Kenichiro Tanaka, S. Tamura, T. Hatsuda, M. Ishida, T. Ueda. International Electron Devices Meeting, 2016

139 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/5a9ac26034918423af320b70ad799b5297363151