Making a field effect transistor on a single graphene nanoribbon by selective doping

By Bing Huang, Q. Yan, Gang Zhou, Jian Wu, Feng Liu, B. Gu, Wenhui Duan. 2007

147 citations recorded by the source corpus.

Using first-principles electronic structure calculations, we show a metal-semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of nitrogen or boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principles quantum transport calculations.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5a430e77ae6cf230b35d0b2287374a70ab8b2432