Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes

By Ya. I. Alivov, J. E. Nostrand, D. Look, M. Chukichev, B. Ataev. 2003

430 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5940d8ac2d2db5ac264098a7e4de17f2b119908f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Zhong Lin Wang
2. Faiz Rahman
3. Sheng Xu

In Electronic, Optical and Magnetic Materials

1. Sheng Xu
2. Zhong Lin Wang
3. Faiz Rahman
4. R. Dharmasena
5. S. R. P. Silva
6. Chengkuo Lee
7. Jun Chen
8. Jianjun Luo

In Materials Chemistry

1. Sheng Xu
2. Zhong Lin Wang
3. Faiz Rahman
4. Magnus Willander
5. A. Zainelabdin
6. Omer Nur
7. M. Tyona
8. Yoshio Bando

Citations in the corpus

• One-dimensional ZnO nanostructures: Solution growth and functional properties (2011, methodology): “There has also been a controversy about whether the emission is from the n-ZnO side [147, 376] or the p-GaN side [372, 377].”
• Zinc oxide light-emitting diodes: a review (2019, background): “An example of this kind of work was reported by a group of Russian researchers in 2003.(66,67) They grew GaN layers through molecular beam epitaxy (MBE) on a sapphire substrate where the top layer was an Mg-doped p-type layer.”
• Luminescence from Zinc Oxide Nanostructures and Polymers and their Hybrid Devices (2010, background): “The origin of the blue-violet peak centered at 450 nm is still controversial, with possible sources of the transition from zinc interstitial to zinc vacancy [3,70] and the radiative recombination related to deep Mg acceptor levels [71,72].”