Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

By S. Blokhin, J. Lott, A. Mutig, G. Fiol, N. Ledentsov, M. Maximov, A. Nadtochiy, V. Shchukin, D. Bimberg. 2009

143 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/593b0b09b425abda44b4386ee784d49d7317fd95

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In Electrical and Electronic Engineering

1. Anders Larsson
2. Petter Westbergh
3. Å. Haglund
4. Johan S. Gustavsson

Citations in the corpus

• Advances in VCSELs for Communication and Sensing (2010, background): “Efforts on improving the speed of GaAs-based 850 nm datacom VCSELs has enabled a modulation bandwidth of 20 GHz [5-6], with more recent work recognizing the importance of reducing the photon lifetime extending the bandwidth to 23 GHz (Fig.”
• 1550-nm High-Speed Short-Cavity VCSELs (2011, background): “2109700 850-nm VCSELs with bandwidths exceeding 23 GHz [2] serve these needs, enabling data transmission at bit rates of 40 Gb/s over short distances [3], [4].”