Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
By T. Chen, T. Chang, Chih-Tsung Tsai, Tien-Yu Hsieh, Shih-Ching Chen, Chia-Sheng Lin, Ming‐Chin Hung, Chun‐Hao Tu, Jiun-Jye Chang, Po‐Lun Chen. 2010
176 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/59339290400edbd33485b85a35e6c7ee826f001b
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy (2011, background): “About the photosensitivity of the a-IGZO TFT, mainly the effects of the passivation layer [9], the device structure [10], and the photostability [11] are studied, and the effect of the V̈O value of a-IGZO is seldom researched for controlling its optical properties and reducing the deposition process”