Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
By J. Kwo, M. Hong, A. Kortan, K. Queeney, Y. Chabal, R. Opila, D. Muller, S. Chu, B. Sapjeta, T. Lay and 6 more. 2001
253 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/591b8ecbb25fe999effa89bacfea9af16857680c
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors (2004, result): “The measured dielectric constant of the Y 2 O 3 gate insulator was ∼16 e 0 (where e 0 is the dielectric constant of vacuum), which is close to that reported for crystalline Y 2 O 3 (∼ 18 e 0”