Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide

By P. Vashishta, R. Kalia, A. Nakano, José P. Rino. 2007

371 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5908d8a3f38a68ffbb2ab3147eb2ceb3bc42726a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. L. Snead
2. Y. Katoh
3. Yung C. Shin
4. Chinmaya R. Dandekar

In Materials Chemistry

1. L. Snead
2. Y. Katoh
3. William J. Weber
4. Yung C. Shin
5. I. Szlufarska
6. Chinmaya R. Dandekar
7. K. Terrani
8. S. Zinkle

Citations in the corpus

• Molecular dynamics based cohesive zone law for describing Al–SiC interface mechanics (2011, methodology): “The elastic constants C11, C12 and C44 are determined as 390 GPa, 143 GPa and 185 GPa respectively and compare well with experimental and MD simulated observations [30].”
• Radiation effects in SiC for nuclear structural applications (2012, positive): “While molecular dynamics (MD) force fields have been developed [1,2] to capture many of the properties of SiC (e.”
• Molecular dynamics simulation study of deformation mechanisms in 3C-SiC during nanometric cutting at elevated temperatures (2016, neutral): “1747 結撃 Å態 斑 [29-30], suggesting the overestimation of the unstable GSFE by the two empirical potentials employed in this study.”