Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2.
By Yung‐Chang Lin, Dumitru Dumcenco, Ying-Sheng Huang, K. Suenaga. Nature Nanotechnology, 2014
1,295 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5853ac2280ac7ef6c9de2b8cb75b01c31dd2fd6f
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Citations in the corpus
- A review on mechanics and mechanical properties of 2D materials—Graphene and beyond (2016, methodology): “Structural phase switching in bulk TMDs has been reported via lithium-based chemical exfoliation [245–247], using an electron beam [248], and controlling chemical tellurization rate of a Mo film [249].”
- Recent Advances in Two-Dimensional Materials beyond Graphene. (2015, background): “MoS2 at the atomic scale (Figure 9f), and they showed that the size of the 1T domains in the 2H matrix can be controlled by adjusting the electron dose.(267) In a more recent study, Lin et al.”
- Strain effects on thermoelectric properties of two-dimensional materials (2015, background): “[75] A similar transition was also predicted in other TMDs [76] and also MoS2 nanotubes [77].”
- From two-dimensional materials to their heterostructures: An electrochemist's perspective (2017, methodology): “Despite their lowhroughput, these methods are powerful for examination of atomic efects, grain boundaries, edge termination, and bonding in 2D aterials [115,176–180], determination of the stacking sequence n TMDCs [158], or quantum dot phase engineering in monolayer oS2 [40].”
- Graphene versus MoS2: A short review (2014, background): “While the studies on the yield stress in SLMoS2 are limited, the novel structure transition in SLMoS2 has received considerable attention [70–73].”