Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

By H. Goto, K. Nosaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, T. Fukui. 2009

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Doping of semiconductor nanowires (2011, background): “Both metalorganic precursors such as diethyl zinc (DEZn) and hydride precursors such as hydrogen sulphide (H2S) are used, and for a given dopant there may be several different precursors available.”
III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “43 [201]”
Nanowires With Promise for Photovoltaics (2011, background): “p/n core/shell NW PV structures in InP [29].”
III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (2011, background): “As mentioned in previous report regarding core–shell InP NW solar cell [90], there is a possibility that these carrier concentrations for the CMS NWs”
Si microwire-array solar cells (2010, methodology): “Wire solar cells have been fabricated using c-Si,[26, 44, 61, 62, 63, 64, 65, 66, 67, 68, 69] amorphous-Si,[70] GaAs,[71] III-Nitrides,[72] and InP,[73] via a variety of growth techniques, including VLS growth,[26, 44, 61, 62, 63, 64, 65, 66, 69] metal-catalyzed chemical etching,[67, 70] molecular b”