Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates

By S. Ting, E. Fitzgerald. 2000

154 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering

View Paper: https://www.semanticscholar.org/paper/57714707af2cd6f98199b5a4ae3b1ca992a9e89a

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In Atomic and Molecular Physics, and Optics

1. Jun Ye
2. O. Heckl
3. Markus Aspelmeyer

Citations in the corpus

• High-performance near- and mid-infrared crystalline coatings (2016, background): “Note that this limitation may be overcome if suitable large-area substrates can be developed, namely GaAs wafers with diameters >20 cm, or through the use of heteroepitaxial growth on Si via relaxed SiGe buffer layers [20], with the potential for expanding the coating diameter to the current maximum”