First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

By X. Mei, W. Yoshida, M. Lange, Jane Lee, Joe X. Zhou, Po-Hsin Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy and 2 more. IEEE Electron Device Letters, 2015

345 citations recorded by the source corpus.

Subfields: Astronomy and Astrophysics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/570fa403f9d3cebcdd074bae7614bc7151a72d93

How researchers see this paper

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In Astronomy and Astrophysics

1. Mohamed-Slim Alouini

In Electrical and Electronic Engineering

1. Hadi Sarieddeen
2. Tareq Y.Al-Naffouri
3. Mohamed-Slim Alouini
4. Khaled Ben Letaief
5. Wei Zhang

Citations in the corpus

• Terahertz Imaging and Sensing Applications With Silicon-Based Technologies (2019, neutral): “5 THz [12].”
• Terahertz Band: The Last Piece of RF Spectrum Puzzle for Communication Systems (2019, neutral): “5 THz [68].”
• Attosecond optical-field-enhanced carrier injection into the GaAs conduction band (2018, methodology): “The interaction is divided into two delay windows: (1) transient response during the pump–probe overlap, and (2) lasting signal after the pump interaction.”
• An Overview of Signal Processing Techniques for Terahertz Communications (2020, background): “for example) semiconductors [47] in high electron mobility transistors (HEMTs) [48]–[50], heterojunction bipolar transistors (HBTs) [46], [51], and Schottky diodes [52].”