Generation of dense electron-hole plasmas in silicon

By K. Sokolowski-Tinten, D. Linde. 2000

525 citations recorded by the source corpus.

Subfields: Computational Mechanics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/56d3ac626fca114c205f0379eecd9edc617ad907

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Computational Mechanics

1. D. Ivanov
2. Martin E. Garcia
3. S. Anisimov
4. B. Rethfeld
5. Yuri Kivshar

In Materials Chemistry

1. D. Ivanov
2. Yuri Kivshar

In Mechanics of Materials

1. D. Ivanov
2. Martin E. Garcia
3. S. Anisimov
4. B. Rethfeld

Citations in the corpus

• High-Harmonic Generation from Resonant Dielectric Metasurfaces Empowered by Bound States in the Continuum (2020, methodology): “field strength |E(t)| and electron-hole plasma carrier density for the 0.8 μJ pulse. S5. Calculations for electron-hole plasma contribution to dielectric permittivity of silicon According to the work [S2], electron-hole plasma changes silicon dielectric permittivity via Drude contribution, which can”
• Modelling ultrafast laser ablation (2017, background): “The attenuation of laser intensity by single- and two photon absorption as well as free carrier absorption is given by [18, 24, 34, 35]”