Giant magnetoresistance in organic spin-valves

By Z. Xiong, Di Wu, Z. Vardeny, Jing Shi. Nature, 2004

1,292 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5687588ca2a81043b23b1b21158216327e3002b9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Albert Fert
2. V. Joshi
3. Eiji Saitoh
4. Hidekazu Kurebayashi
5. Henning Sirringhaus
6. K. Ando
7. Axel Hoffmann
8. Manuel Bibes

In Electrical and Electronic Engineering

1. Valentin Alek Dediu
2. Ilaria Bergenti
3. Albert Fert
4. L. Hueso
5. Hidekazu Kurebayashi
6. Henning Sirringhaus
7. G. Horowitz
8. S. Ludwigs

Citations in the corpus

• Spintronics: A contemporary review of emerging electronics devices (2016, background): “A sizeable OMAR of 40% was observed at 11 K temperature [68].”
• Polaron spin current transport in organic semiconductors (2014, methodology): “Because we chose the thicknesses of the spin sink layers to scale with the literature values of the spin diffusion lengths in Pt, Au, and Cu (that is, the factors dNM/λNM and tanh(dNM/2λNM) in equation (1) are adjusted to be similar among the NM layers), the measured voltage ratio of devices with di”
• Spintronics: Fundamentals and applications (2004, neutral): “obility, ∼ 10−4cm2V −1s (about ∼ 107 times smaller than for the bulk GaAs), and long spin relaxation times, ∼ µs,69 as compared to the usual III-V inorganic semiconductors. Motivated by these findings Xiong et al. (2004) have replaced one of the LSMO electrodes by Co. Different coercive fields in the t”