Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes

By G. Plechinger, S. Heydrich, J. Eroms, Dieter Weiss, Schüller, T. Korn. 2012

195 citations recorded by the source corpus.

Single- and few-layer MoS2 has recently gained attention as an interesting new material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 relative wavenumbers. Its position strongly depends on the number of layers, which we independently determine using AFM measurements and investigation of the other characteristic Raman modes. Raman spectroscopy of the shear mode therefore is a useful tool to determine the number of layers for few-layer MoS2 flakes.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/562c5b0bec23221f7269b068df773a7a995d6e67

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. Gang Zhang
  2. Yong‐Wei Zhang
  3. Qing Zhang
  4. R. Ganatra

In Electrical and Electronic Engineering

  1. Gang Zhang
  2. Yong‐Wei Zhang
  3. Yongqing Cai
  4. Qing Zhang
  5. R. Ganatra
  6. Z. Ong
  7. V. Sorkin

In Materials Chemistry

  1. Yong‐Wei Zhang
  2. Gang Zhang
  3. Yongqing Cai
  4. Qing Zhang
  5. R. Ganatra
  6. Jinghua Lan
  7. Z. Ong
  8. V. Sorkin

Citations in the corpus