Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
By G. Plechinger, S. Heydrich, J. Eroms, Dieter Weiss, Schüller, T. Korn. 2012
195 citations recorded by the source corpus.
Single- and few-layer MoS2 has recently gained attention as an interesting new material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 relative wavenumbers. Its position strongly depends on the number of layers, which we independently determine using AFM measurements and investigation of the other characteristic Raman modes. Raman spectroscopy of the shear mode therefore is a useful tool to determine the number of layers for few-layer MoS2 flakes.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/562c5b0bec23221f7269b068df773a7a995d6e67
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Few-layer MoS2: a promising layered semiconductor. (2014, background): “There also exist low-frequency interlayer breathing (B2g (2)) and shear (E2g (2)) modes (see Figure 2b,d,e), which are functions of the layer number and can be used to examine the structural properties of few-layer MoS2 flakes and determine layer number.(65,75,76) The shear mode E2g 2 is found to un”
- Lattice vibrational modes and phonon thermal conductivity of monolayer MoS2 (2013, background): “However, the two modes evolve into a series of shear (S) and compression (C) modes in FL MoS2 spreading around 30 cm (1), respectively [34-37].”