A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

By S. Han, JW Song, Chan-Ho Yang, S. Park, Jae-Hoon Park, Y. Jeong, K. Rhie. 2002

288 citations recorded by the source corpus.

Successful synthesis of room-temperature ferromagnetic semiconductors, Zn1−xFexO, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn1−xFexO was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn0.94Fe0.05Cu0.01O; the saturation magnetization at room temperature reached a value of 0.75μB per Fe. A large magnetoresistance was also observed below 100 K.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/556af8815539f241b392af2dc19d7814871cd2fd

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In Electronic, Optical and Magnetic Materials

1. Pallab K. Bhattacharya
2. M. Holub

In Materials Chemistry

1. Pallab K. Bhattacharya
2. M. Holub

Citations in the corpus

• Spin-polarized light-emitting diodes and lasers (2007, background): “Several groups have investigated the production of ferromagnetic ZnO-based films by numerous methods, including pulsed-laser deposition [46], ion implantation [47], solid-state reaction [48], radio frequency magnetron sputtering [49] and MBE [50, 51].”