Static noise margin variation for sub-threshold SRAM in 65-nm CMOS

By Benton H. Calhoun, Anantha P. Chandrakasan. IEEE Journal of Solid-State Circuits, 2006

371 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5504f7b4924f2356c661bb2586aacd752f4e7c51

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In Electrical and Electronic Engineering

1. Keejong Kim
2. Kaushik Roy
3. Jaydeep P. Kulkarni
4. Yonghong Tian

Citations in the corpus

• A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM (2007, background): “Thus, in the subthreshold region, SNM is relatively independent of the device sizing [15].”