Engineering nonlinearity into memristors for passive crossbar applications

By J. Joshua Yang, Min-xian Zhang, Matthew D. Pickett, Feng Miao, John Paul Strachan, Wendi Li, W. Yi, D. Ohlberg, Byung Joon Choi, Wei Wu and 3 more. 2012

207 citations recorded by the source corpus.

Although TaOx memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO2-x/TaOx oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/547eee4c6db2ef8deb235cd8edf91cfc76dffcbc

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In Cellular and Molecular Neuroscience

In Electrical and Electronic Engineering

Citations in the corpus

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “For high density implementation, resistive switching devices can be arranged in crossbar architecture which has minimum memory cell area of 4F2 [68,69].”
Memristor Crossbar-Based Neuromorphic Computing System: A Case Study (2014, background): “Although some recent works were presented to improve the WRITE/READ ability of memristor crossbars by leveraging the device nonlinearity [31], the controllability of analog state programming is still limited.”
Memristor-based memory: The sneak paths problem and solutions (2013, background): “In [48], a high nonlinear device is reported, such that I(V/2) ≈ I(V)/100 at V ≈ 1V .”