Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

By A. Stassen, R. D. Boer, N. Iosad, A. Morpurgo. 2004

268 citations recorded by the source corpus.

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with increasing the dielectric constant of the gate insulator, the decrease being proportional to e−1. This finding demonstrates that the mobility of carriers in organic single-crystal field-effect transistors is an intrinsic property of the crystal/dielectric interface and that it does not only depend on the specific molecule used.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/53a5b48198e1bbe2d4988c64430fa736d74669c2

Citations in the corpus

• Electric double-layer transistors: a review of recent progress (2015, unknown): “This leads to a lower hopping probability and then suppresses the carrier mobility [115].”