Physical mechanisms of endurance degradation in TMO-RRAM

By Bing Chen, Yang Lu, Bin Gao, Y. Fu, F. Zhang, P. Huang, Y. S. Chen, Lu Liu, X. Y. Liu, Jinfeng Kang and 8 more. International Electron Devices Meeting, 2011

148 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/53056a66e2ca0d65e3ec65ac75b6e24738aa4782