Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires

By Volker Schmidt, S. Senz, U. Gösele. 2006

140 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/52ed28ea11961cb2aaeb4352092c8b85ea5966da

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Mark L. Brongersma
2. Yi Cui
3. M. McGehee
4. E. Garnett
5. S. A. Maier
6. Charles M. Lieber
7. Magnus Borgström
8. Xiuling Li

In Electrical and Electronic Engineering

1. Yi Cui
2. Mark L. Brongersma
3. M. McGehee
4. E. Garnett
5. S. A. Maier
6. Qiang Zhang
7. Charles M. Lieber
8. Jia-qi Huang

Citations in the corpus

• Nanowire Solar Cells (2011, background): “However, this result also suggests that unpassivated nanowires with diameters of less than 100 nm and doping levels near 1 × 1017 cm−3 can easily be completely depleted by the surface states (69).”