Three Fingerprints of Memristor

By Shyam Prasad Adhikari, Maheshwar Prasad Sah, Hyongsuk Kim, Leon Ong Chua. IEEE Transactions on Circuits and Systems Part 1: Regular Papers, 2013

554 citations recorded by the source corpus.

This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.

Subfields: Cellular and Molecular Neuroscience, Cognitive Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/52e477b428245a28aae3c8c4a08bbfb506958e2c

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In Cellular and Molecular Neuroscience

  1. Bocheng Bao
  2. Quan Xu
  3. Huagan Wu
  4. Leon Ong Chua
  5. Abdon Atangana
  6. Kashif Ali Abro

In Cognitive Neuroscience

  1. Bocheng Bao
  2. Quan Xu
  3. Huagan Wu
  4. Leon Ong Chua
  5. Zhong Liu
  6. Pan Jiang

In Electrical and Electronic Engineering

  1. Bocheng Bao
  2. Quan Xu
  3. Huagan Wu
  4. Leon Ong Chua
  5. Abdon Atangana
  6. Kashif Ali Abro
  7. Andy Thomas

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