Direct integration of metal oxide nanowire in vertical field-effect transistor

By P. Nguyen, H. Ng, Toshishige Yamada, Michael K. Smith, Jun Li, Jie Han, M. Meyyappan. 2004

250 citations recorded by the source corpus.

We demonstrate seamless direct integration of a semiconductor nanowire grown using a bottom-up approach to obtain a vertical field-effect transistor (VFET). We first synthesize single crystalline semiconductor indium oxide (In2O3) nanowires projecting vertically and uniformly on a nonconducting optical sapphire substrate. Direct electrical contact to the nanowires is uniquely provided by a self-assembled underlying In2O3 buffer layer formed in-situ during the nanowire growth. A controlled time-resolved growth study reveals dynamic simultaneous nucleation and epitaxial growth events, driven by two competitive growth mechanisms. Based on the nanowire-integrated platform, a depletion mode n-channel VFET with an In2O3 nanowire constituting the active channel is fabricated. Our unique vertical device architecture could potentially lead to tera-level ultrahigh-density nanoscale electronic, and optoelectronic devices.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/52cae25f0f25ce9da46b02c1d22a02ff14167b7d

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In Biomedical Engineering

In Materials Chemistry

Citations in the corpus

Metal oxide nanocrystals for gas sensing (2004, background): “Many solutions have been proposed from vertical field effect transistors [9], field emission growth [11] and self-assembled nanowires [5].”