Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s
By V. Podzorov, S. Sysoev, E. Loginova, V. Pudalov, Michael Gershenson. 2003
362 citations recorded by the source corpus.
We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect mobility μ∼8 cm2/V s, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. The subthreshold slope as small as S=0.85 V/decade has been observed for a gate insulator capacitance Ci=2±0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si≡SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (α-Si:H) devices.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/5297542a99ab2ea2d3c38a385a87bc30eb0ff601
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Organic thin film transistors: From theory to real devices (2004, background): “Mobility up to 8 cm(2)/Vs have been claimed with rubrene single crystals.(68) With tetracene and pentacene, reported mobility is 0.”