Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

By K. Emtsev, F. Speck, T. Seyller, L. Ley, J. Riley. 2008

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Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “A low density of states in the vicinity of the Fermi level is a consequence of the strongly-modified electronic structure of the buffer layer due to partial hybridization of its carbon atoms with the SiC substrate [10,11].”
Water on graphene: review of recent progress (2018, background): “ar to graphene, as it is composed of carbon atoms in a honeycomb lattice, but a significant amount of sp3 bonds to the SiC substrate are present. This layer is called interfacial layer or buffer layer[110]. The first graphene layer will grow on top of the IFL. Research groups are intensely trying to”
Production and processing of graphene and related materials (2020, methodology): “This layer consists of C atoms in a graphene arrangement [590, 592, 668].”